200v 4.0a VSSB420S web site: www.taychipst.com 1 of 2 features e-mail: sales@taychipst.com maximum ratings and electrical characteristics mechanical data surface mount trench mos barrier schottky rectifier ? low profile package ? ideal for automated placement ? trench mos schottky technology ? low power losses, high efficiency ? low forward voltage drop ? meets msl level 1, per j-st d-020, lf maximum peak of 260 c ? compliant to rohs directive 2002/95/ec and in accordance to weee 2002/96/ec case: do-214aa (smb) molding compound meets ul 94 v-0 flammability rating base p/n-e3 - rohs compliant, commercial grade terminals: matte tin plated leads, solderable per j-std-002 and jesd 22-b102 e3 suffix meets jesd 2 01 class 1a whisker test polarity: color band denotes the cathode end maximum ratings (t a = 25 c unless otherwise noted) parameter symbol VSSB420S unit device marking code v4d maximum repetitive pe ak reverse voltage v rrm 200 v maximum dc forward current i f (1) 4.0 a i f (2) 1.8 peak forward surge current 10 ms single ha lf sine-wave superimposed on rated load i fsm 40 a voltage rate of change (rated v r ) dv/dt 10 000 v/s operating junction and storage temperature range t j , t stg - 40 to + 150 c notes (1) free air, mounted on recommended pcb 1 oz. pad area; thermal resistance r ? ja - junction to ambient (2) units mounted on pcb with 20 mm x 20 mm copper pad areas; thermal resistance r ? jm - junction to mount electrical characteristics (t a = 25 c unless otherwise noted) parameter test conditions symbol typ. max. unit instantaneous forward voltage i f = 4.0 a t a = 25 c v f (1) 1.44 1.90 v t a = 125 c 0.71 0.80 reverse current per diode v r = 180 v t a = 25 c i r (2) 3-a t a = 125 c 0.7 - ma v r = 200 v t a = 25 c 4 150 a t a = 125 c 1.1 10 ma typical junction capacitance 4.0 v, 1 mhz c j 120 - pf thermal characteristics (t a = 25 c unless otherwise noted) parameter symbol VSSB420S unit typical thermal resistance r ? ja (1) 120 c/w r ? jm (2) 15
ratings and characteristic curves VSSB420S e-mail: sales@taychipst.com web site: www.taychipst.com 2 of 2 surface mount trench mos barrier schottky rectifier fig. 1 - maximum forward current derating curv e fig. 2 - forward power loss characteristics 0 25 50 75 100 125 4.0 150 t m - mo u nt temperat u re (c) a v erage for w ard re ctified c u rr ent (a ) 2.5 2.0 1.5 0.5 0 1.0 t m meas u red at terminal 3.0 3.5 0 3.6 0 2.4 a v erage for w ard c u rrent (a) a v erage po w er loss ( w ) 1.4 1.2 1.0 0. 8 0.6 0.4 0.2 3.2 2. 8 2.4 2.0 1.6 1.2 0. 8 0.4 d = t p /t t p t d = 0.1 d = 0.2 d = 0.3 d = 0.5 d = 0. 8 d = 1.0 2.2 2.0 1. 8 1.6 fig. 3 - typical instantaneous forward characteristics fig. 4 - typical reverse characteristics fig. 5 - typical junction capacitance fig. 6 - typical transient thermal impedance 1 100 0 0.1 instantaneo u s for w ard v oltage ( v ) instantaneo u s for w ard c u rrent (a) t a = 125 c t a = 25 c t a = 100 c t a = 150 c 10 0.2 0.4 0.6 0. 8 1.0 1.2 1.6 1.4 10 20 40 60 0.0001 0.001 0.01 0.1 1 100 8 0 100 percent of rated peak re v erse v oltage ( % ) t a = 125 c t a = 25 c t a = 100 c t a = 150 c 30 50 70 90 instantaneo u s re v erse c u rrent (ma) 10 100 10 10 100 1000 0.1 1 re v erse v oltage ( v ) j u nction capacitance (pf) t j = 25 c f = 1.0 mhz v sig = 50 m v p-p 100 10 1 100 1000 0.01 1 t - p u lse d u ration (s) transient thermal impedance (c/ w ) 10 0.1 j u nction to am b ient 200v 4.0a VSSB420S
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